Theodore Moustakas

In the News

Selected Publications

• T. D. Moustakas and R. Paiella, “Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz: a review” (Invited) Rep. Prog. Phys. 80, 106501 (2017)
• T. D. Moustakas, “Ultraviolet Optoelectronic devices based on AlGaN alloys grown by MBE”, MRS Communications, Vol. 6, pp. 247-269 (2016) DOI:10.1557/mrc.2016.26
• T. D. Moustakas “The role of extended defects on the performance of optoelectronic devices in nitride semiconductors” Physica Status Solidi A 210, No.1, 169-174 (2013). DOI 10.1002/pssa.201200561
• E. Francesco Pecora, Wei Zhang, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas, “Sub-250nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band structure potential fluctuations”, Phys. Lett. 100, 061111 (February 2012)
• F. Pecora, W. Zhang, A. Yu. Nikiforov, J. Yin, R. Paiella, L. Dal Negro and T. D. Moustakas, “Sub-250 nm light emission and optical gain in AlGaN materials” J. Appl. Phys. 113, 013106 (Jan. 2013)
• Wei Zhang, A. Yu. Nikiforov, C. Thomidis, J. Woodward, H. Sun, Chen-Kai Kao, D. Bhattarai, A. Moldawer, L. Zhou, D. J. Smith and T. D. Moustakas, “MBE growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency” Journal of Vacuum Science and Technology B 30 (2), 02B119-1 (March 2012)
• D. Moustakas and A. Bhattacharyya, “The role of liquid phase epitaxy during growth of AlGaN by MBE”,Phys. Status Solidi C 9, No. 3–4, 580–583 (January 2012)
• Josh Abell and T. D. Moustakas, “The role of dislocations as non-radiative recombination centers in InGaN MQWs” Phys. Lett. 92, 091901 (2008)
• E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, D. J. Smith. J. Abell, C –K. Kao and T. D. Moustakas, “Growth and properties of near-UV light emitting diodes based on InN / GaN quantum wells” Physica Status Solidi (a) 205, 1070 (2008)
• W. Pan, E. Dimakis, G.T. Wang, T.D. Moustakas, and D.C. Tsui, “Two-dimensional electron gas in monolayer InN quantum wells”, Appl. Phys. Lett. 105, 213503 (2014)
• A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David J. Smith and W. Hug, “Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency” Appl. Phys. Lett. 94,181907 (2009)
• Y. Liao, C. Thomidis, C-K. Kao, and T. D. Moustakas, “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” Appl. Phys. Lett. 98, 081110 (February 2011)
• T. D. Moustakas, Y. Liao, C-k. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai and A. Moldawer (Invited paper), “Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations” Proc. of SPIE Vol. 8278, 82780L-1 (March 2012)